Simulator相关论文
核电厂操纵人员的能力培养对于核电厂运行的安全性十分重要，因此，需要探索更加贴近现实的培训方式，以提高操纵人员的事故处理能力?本......
High Precision Broadband Direct-Spread Signal Delay Control Based on Phase Controlled Waveform Hermi
When generating simulation satellite navigation signal,the delay of the broadband direct-spread satellite navigation sig......
Amethod of data connection by a digital simulator and EMS system is provided in the paper, and integration with off-line......
The effectiveness of virtual reality simulator Uromentor in the skill acquisition of flexible cystos
Background Virtual reality (VR) has been recognized as a useful modality in the training of surgical skills.With respect......
Wear has been recognized as the key factor affecting the long-term performance of orthopaedic implants such as hip,knee ......
Effectiveness of the UroMentor virtual reality simulator in the skill acquisition of flexible cystos
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The “memory wall” problem or so-called yon Neumann bottleneck limits the efficiency of conven-tional computer architec......
目的:设计一套新型增强现实技术结合模拟人教学方法,用于促进骨科教学水平提升.方法:选取学生40名随机分为对照组及实验组,对照组......
本文对某核电站数字控制计算机(DCC)系统进行了分析，在了解其功能原理的基础上设计了虚拟DCC控制系统，使得棱电站Dcc的控制程序能够......
AN INVESTIGATION ON THE MATHEMATICAL MODEL OF ELECTRODE DIFFUSION PROCESS IN THE DETERMINATION OF DI
The mathematical model of diffusion process in polarographic determination of dissolved oxygen hasbeen thoroughly studi......
The injection of fuel-generated CO2 into oil reservoirs will lead to two benefits in both enhanced oil recovery (EOR) an......
近二十年来,计算机在森林生长研究分析和生长量预报两方面的应用中都取得了很大进步。尽管如此,它与用计算机提供我们进行森林经......
The hot deformation experiments of ultra-low carbon steel in ferrite range were carried out in a hot simulator in order ......
With hot rolling in laboratory and Gleeble thermal simulator,the hot working of a high nitrogen austenitic stainless ste......
A novel model of the evolution of microstructure during continuous cooling with the formation of proeutectoid ferrite in......
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is considered as the most promising candidate used in dee......
The superplastic deformation diffusion bonding of 00Cr25Ni7Mo3N duplex stainless steel was performed on a hot simulator.......
A new cycle-by-cycle control flyback converter with primary side detection and peak current mode control is proposed an......
A dual material gate silicon-on-insulator MOSFET with asymmetrical halo is presented to improve short channel effect and......
Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitr
Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevit......
Dual material gate SOI MOSFET with asymmetrical halo can suppress short channel effect and increase carriers transport e......
Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering th
The grain boundaries(GBs) have a strong effect on the electric properties of ZnO thin film transistors(TFTs).A novel gra......
Networks-on-chip(NoC),a new system on chip(SoC) paradigm,has become a great focus of research by many groups during the ......
Two layout and process key parameters for improving high voltage nLEDMOS(n-type lateral extended drain MOS) transistor h......
Influence of layout parameters on snapback characteristic for a gate-grounded NMOS device in 0.13-μm
Gate-grounded NMOS (GGNMOS) devices with different device dimensions and layout floorplans have been designed and fabric......
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si......
Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Ca
Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistor......
This paper stuides the structures of 4H-SiC floating junction Schottky barrier diodes. Some structure parameters of devi......
Epitaxial channel metal-oxide semiconductor field-effect transistors(MOSFETs) have been proposed as one possible way to ......
A laser simulator is proposed which is based on a hardware-in-loop(HWIL) simulation test system.As an important device i......
With the use of a chemical-mechanical polishing(CMP) simulator verified by testing data from a foundry, the effect of du......
We demonstrate a two-dimensional(2D) full-band ensemble Monte-Carlo simulator for heterostructures, which deals with car......
EMP injection damage effects of a bipolar transistor and its relationship between the injecting volt
The response of a bipolar transistor(BJT) under a square-wave electromagnetic pulse(EMP) with different injecting voltag......
A novel design of power management integrated circuit with 90 plus efficiency used in AC/DC converte
Recently, resonant AC/DC converter has been accepted by the industry. However, the efficiency will be decreased at light......
As a connection between the process and the circuit design,the device model is greatly desired for emerging devices,such......
The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limitin......
An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOS......
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ThredimensionallargescaleearthquakesimulatorwithsixdegresoffredomJUNWEIHAN1) (Han Junwe......
The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studi......
A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate str
On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional anal......
In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(......
Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI
A new 2D analytical drain current model is presented for symmetric double-gate fully depleted nanoscale SOI MOSFETs.Inve......
Analytical model including the fringing-induced barrier lowering effect for a dual-material surround
By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analy......
On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping pr
An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping pro......
Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Mon
We investigate the influence of gate-source/drain(G-S/D) misalignment on the performance of bulk fin field effect transi......
An analytical surface potential model for the single material double work function gate(SMDWG) MOSFET is developed based......
We compared several different band-to-band tunneling(BTBT) models with both Sentaurus and the two-dimensional full-band ......
The catalytic partial oxidation of methane to syngas (CO+H2) has been simulated thermodynamically with the advanced proc......
